Reliability of Strained-Si Devices With Post-Oxide-Deposition Strain Introduction.

Autor: Shickova, Adelina1,2 adelina.shickova@imec.be, Verheyen, Peter1, Eneman, Geert1,2,3, Degraeve, Robin1, Simoen, Eddy1, Favia, Paola1, Klenov, Dmitri O.4, Andrés, Enrique San, Kaczer, Ben1, Jurczak, Malgorzata1, Absil, Philippe1, Maes, Herman E.1,2, Groeseneken, Guido1,2
Zdroj: IEEE Transactions on Electron Devices. Dec2008, Vol. 55 Issue 12, p3432-3441. 10p.
Databáze: Business Source Ultimate