SEGR Study on Power MOSFETs: Multiple Impacts Assumption.
| Autor: | Peyre, D.1, Poivey, Ch.2, Bonis, Ch.1, Mangeret, R.3, Salvaterra, G.1, Beumel, M.1, Pontoni, F.1, Bouchet, T.1, Pater, L.4, Bezerra, F.5, Ecoffet, R.5, Lorfèvre, E.5, Sturesson, F.2, Berger, G.6, Foy, J. C.7, Piquet, B.7 |
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| Zdroj: | IEEE Transactions on Nuclear Science. Aug2008 Part 1 of 2, Vol. 55 Issue 4, p2181-2187. 7p. 4 Diagrams, 9 Graphs. |
| Databáze: | Business Source Ultimate |
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