Numerical Study of the Turnoff Behavior of High-Voltage 4H-SiC IGBTs.
| Autor: | Tamaki, Tomohiro1,2 tamaki.tomohiro@renesas.com, Walden, Ginger G.3, Yang Sui3, Cooper, James A.3 |
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| Zdroj: | IEEE Transactions on Electron Devices. Aug2008, Vol. 55 Issue 8, p1928-1933. 6p. |
| Databáze: | Business Source Ultimate |
| Externí odkaz: |
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