Inverse Modeling of Two-Dimensional MOSFET Dopant Profile via Capacitance of the Source/Drain Gated Diode.
| Autor: | Chiang, C. Y. T., Yeow, Y. T. |
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| Zdroj: | IEEE Transactions on Electron Devices. Jul2000, Vol. 47 Issue 7, p1385. 8p. 2 Diagrams, 1 Chart, 14 Graphs. |
| Databáze: | Business Source Ultimate |
| Externí odkaz: |
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