DICE: A Beneficial Short-Channel Effect in Nanoscale Double-Gate MOSFETs.
| Autor: | Chouksey, Siddharth1 sidc@tec.ufl.edu, Fossum, Jerry G.1 fossum@tec.ufl.edu |
|---|---|
| Zdroj: | IEEE Transactions on Electron Devices. Mar2008, Vol. 55 Issue 3, p796-802. 7p. 2 Diagrams, 1 Chart, 5 Graphs. |
| Databáze: | Business Source Ultimate |
| Externí odkaz: |
|