1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime.

Autor: Strittmatter, A.1 strittma@sol.physik.tu-berlin.de, Germann, T.D.1, Pohl, J.1, Pohl, U.W.1, Bimberg, D.1, Rautiainen, J.2, Guina, M.2, Okhotnikov, O.G.2
Zdroj: Electronics Letters (Institution of Engineering & Technology). 2/14/2008, Vol. 44 Issue 4, p290-291. 2p. 3 Graphs.
Databáze: Business Source Ultimate