1040 nm vertical external cavity surface emitting laser based on InGaAs quantum dots grown in Stranski-Krastanow regime.
Autor: | Strittmatter, A.1 strittma@sol.physik.tu-berlin.de, Germann, T.D.1, Pohl, J.1, Pohl, U.W.1, Bimberg, D.1, Rautiainen, J.2, Guina, M.2, Okhotnikov, O.G.2 |
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Zdroj: | Electronics Letters (Institution of Engineering & Technology). 2/14/2008, Vol. 44 Issue 4, p290-291. 2p. 3 Graphs. |
Databáze: | Business Source Ultimate |
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