AlGaN/GaN Schottky-ohmic combined anode field effect diode with fluoride-based plasma treatment.

Autor: Takatani, K.1 takatani.kunihiro@sharp.co.jp, Nozawa, T.1, Oka, T.1, Kawamura, H.1, Sakuno, K.1
Zdroj: Electronics Letters (Institution of Engineering & Technology). 2/14/2008, Vol. 44 Issue 4, p320-321. 2p. 1 Diagram, 2 Graphs.
Databáze: Business Source Ultimate