Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout.

Autor: Kuboyama, Satoshi1 kuboyama.satoshi@jaxa.jp, Kamezawa, Chihiro1, Ikeda, Naomi1, Hirao, Toshio2 hirao.toshio@jaea.go.jp, Ohyama, Hidenori3 ohyama@ee.knci.ac.jp
Zdroj: IEEE Transactions on Nuclear Science. Dec2006 Part 1 of 2, Vol. 53 Issue 6, p3343-3348. 6p. 10 Graphs.
Databáze: Business Source Ultimate