Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout.
Autor: | Kuboyama, Satoshi1 kuboyama.satoshi@jaxa.jp, Kamezawa, Chihiro1, Ikeda, Naomi1, Hirao, Toshio2 hirao.toshio@jaea.go.jp, Ohyama, Hidenori3 ohyama@ee.knci.ac.jp |
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Zdroj: | IEEE Transactions on Nuclear Science. Dec2006 Part 1 of 2, Vol. 53 Issue 6, p3343-3348. 6p. 10 Graphs. |
Databáze: | Business Source Ultimate |
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