Targeting 45nm with improved SiON films and extended gate dielectrics.

Autor: Cunningham, Kevin L.1, Ahmed, Khaled1, Olsen, Chirs1, Hung, Steve1, Chu, Schubert1, Nouri, Faran1
Zdroj: Solid State Technology. Jul2006, Vol. 49 Issue 7, p39-44. 4p.
Databáze: Business Source Ultimate