High power (>10 W from 100 µm aperture) high reliability 808 nm InAlGaAs broad area laser diodes.
| Autor: | Lammert, R. M.1 rlammert@qpc.cc, Osowski, M. L.1, Oh, S. W.1, Panja, C.1, Ungar, J. E.1 |
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| Zdroj: | Electronics Letters (Institution of Engineering & Technology). 4/27/2006, Vol. 42 Issue 9, p535-536. 2p. 1 Diagram, 3 Graphs. |
| Databáze: | Business Source Ultimate |
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