Full Band Monte Carlo Simulation of Zincblende GaN MESFET's Including Realistic Impact Ionization...

Autor:	Farahmand, Maziar, Brennan, Kevin F.
Zdroj:	IEEE Transactions on Electron Devices. Jul99, Vol. 46 Issue 7, p1319. 7p. 5 Graphs.
Databáze:	Business Source Ultimate
Externí odkaz:	Zobrazit plný text záznamu