Implantation and Activation of High Concentrations of Boron in Germanium.

Autor: Yong Seok Suh1 yss2893@njit.edu, Carroll, Malcolm S.2, Levy, Roland A.1, Bisognin, Gabriele3, de Salvador, D.3, Sahiner, M. Alper4, King, Clifford A.5
Zdroj: IEEE Transactions on Electron Devices. Nov2005, Vol. 52 Issue 11, p2416-2421. 6p.
Databáze: Business Source Ultimate