Implantation and Activation of High Concentrations of Boron in Germanium.
Autor: | Yong Seok Suh1 yss2893@njit.edu, Carroll, Malcolm S.2, Levy, Roland A.1, Bisognin, Gabriele3, de Salvador, D.3, Sahiner, M. Alper4, King, Clifford A.5 |
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Zdroj: | IEEE Transactions on Electron Devices. Nov2005, Vol. 52 Issue 11, p2416-2421. 6p. |
Databáze: | Business Source Ultimate |
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