9T fast‐write SRAM bit cell with no conflicts for ultra‐low voltage.

Autor:	Jiang, Chenjie1 (AUTHOR), Wen, Junqi1 (AUTHOR), Meng, Siyu1 (AUTHOR), Fu, Kepu1 (AUTHOR), Xia, Changquan1 (AUTHOR), Chen, Haitao1 (AUTHOR), Qian, Qinyu1 (AUTHOR), Cheng, Liwen1 (AUTHOR) lwcheng@yzu.edu.cn
Zdroj:	Electronics Letters (Wiley-Blackwell). Sep2024, Vol. 60 Issue 17, p1-4. 4p.
Databáze:	Business Source Ultimate
Externí odkaz:	Zobrazit plný text záznamu Plný text