Modeling of Substrate Noise Coupling for nMOS Transistors in Heavily Doped Substrates.
| Autor: | Shuching Hsu1, Fiez, Tern S.2, Mayaram, Kartikeya2 |
|---|---|
| Zdroj: | IEEE Transactions on Electron Devices. Aug2005, Vol. 52 Issue 8, p1880-1886. 7p. |
| Databáze: | Business Source Ultimate |
| Externí odkaz: |
|