A Simulation Approach to Optimize the Electrical Parameters of a Vertical Tunnel FET.

Autor: Bhuwalka, Krishna Kumar1 Krishna.K.Bhuwalka@UniBw-Muenchen.de, Schuize, Jörg1, Eisele, Ignaz1
Zdroj: IEEE Transactions on Electron Devices. Jul2005, Vol. 52 Issue 7, p1541-1547. 7p.
Databáze: Business Source Ultimate