A NEW FIELD-PLATED GaN HEMT STRUCTURE WITH IMPROVED POWER AND NOISE PERFORMANCE.
| Autor: | Hongtao Xu1, Sanabria, Christopher1, Chini, Alessandro1, Wei, Yun1, Heikman, Sten1, Keller, Stacia1, Mishra, Umesh K.1, York, Robert A.1 |
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| Zdroj: | International Journal of High Speed Electronics & Systems. Sep2004, Vol. 14 Issue 3, p186-191. 6p. |
| Databáze: | Business Source Ultimate |
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