Si-H Bond Breaking Induced Retention Degradation During Packaging Process of 256 Mbit DRAMs With Negative Wordline Bias.
| Autor: | Minchen Chang1, Jengping Lin1, Chao-Sung Lai1, Ruey-Dar Chang1, Shih, Steven N.2 minchen@ntc.com.tw, Mao-Ying Wang2, Pei-Ing Lee2 |
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| Zdroj: | IEEE Transactions on Electron Devices. Apr2005, Vol. 52 Issue 4, p484-491. 8p. |
| Databáze: | Business Source Ultimate |
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