Ionization-Induced Carrier Transport in InAlAs/InGaAs High Electron Mobility Transistors.
| Autor: | Mcmorrow, Dale1 mcmorrow@ccs.nrl.navy.mil, Knudson, Alvin R.2, Boos, J. Brad3, Park, Doe4, Melinger, Joseph S.1 |
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| Zdroj: | IEEE Transactions on Nuclear Science. Oct2004 Part 3 of 4, Vol. 51 Issue 5, p2857-2864. 8p. |
| Databáze: | Business Source Ultimate |
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