Charge Trapping and Low Frequency Noise in SOI Buried Oxides.
| Autor: | Xiong, H. D.1 hao.xiong@vanderbilt.edu, Jun, B.1 bongim.jun@vanderbilt.edu, Fleetwood, D. M.1 dan.fleetwood@vanderbilt.edu, Schrimpf, R. D.1 ron.schrimpf@vanderbilt.edu, Schwank, J. R.2 schwanjr@sandia.gov |
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| Zdroj: | IEEE Transactions on Nuclear Science. Dec2004 Part 2 of 3, Vol. 51 Issue 6, p3238-3242. 5p. |
| Databáze: | Business Source Ultimate |
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