High-Performance In₂O₃-Based 1T1R FET for BEOL Memory Application.
| Autor: | Lin, Zehao1, Si, Mengwei1, Lyu, Xiao1, Ye, Peide1 yep@purdue.edu |
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| Zdroj: | IEEE Transactions on Electron Devices. Aug2021, Vol. 68 Issue 8, p3775-3779. 5p. |
| Databáze: | Business Source Ultimate |
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