Impact of AlO y Interfacial Layer on Resistive Switching Performance of Flexible HfO ₓ /AlO y ReRAMs.

Autor: Biswas, S.1, Paul, A. D.1, Das, P.1, Tiwary, P.1, Edwards, H. J.2, Dhanak, V. R.2, Mitrovic, I. Z.3, Mahapatra, R.1 rajat.mahapatra@ece.nitdgp.ac.in
Zdroj: IEEE Transactions on Electron Devices. Aug2021, Vol. 68 Issue 8, p3787-3793. 7p.
Databáze: Business Source Ultimate