Recombination Rates of In x Ga 1−x N/Al y Ga 1−y N/GaN Multiple Quantum Wells Emitting From 640 to 565 nm.
| Autor: | Muyeed, Syed Ahmed Al1 (AUTHOR) sya216@lehigh.edu, Borovac, Damir1 (AUTHOR), Xue, Haotian1 (AUTHOR), Wei, Xiongliang1 (AUTHOR), Song, Renbo1 (AUTHOR), Tansu, Nelson2 (AUTHOR) nelson.tansu@adelaide.edu.au, Wierer, Jonathan J.1 (AUTHOR) jwierer@lehigh.edu |
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| Zdroj: | IEEE Journal of Quantum Electronics. Dec2021, Vol. 57 Issue 6, p1-7. 7p. |
| Databáze: | Business Source Ultimate |
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