Demonstration of High-Performance 4H-SiC MISIM Ultraviolet Photodetector With Operation Temperature of 550 °C and High Responsivity.
Autor: | Du, Fengyu1, Song, Qingwen1 qwsong@xidian.edu.cn, Tang, Xiaoyan1, Zhang, Zeyulin1, Yuan, Hao1, Han, Chao1, Zhang, Chunfu1, Zhang, Yimen1, Zhang, Yuming1 |
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Zdroj: | IEEE Transactions on Electron Devices. Nov2021, Vol. 68 Issue 11, p5662-5665. 4p. |
Databáze: | Business Source Ultimate |
Externí odkaz: |