Demonstration of High-Performance 4H-SiC MISIM Ultraviolet Photodetector With Operation Temperature of 550 °C and High Responsivity.

Autor: Du, Fengyu1, Song, Qingwen1 qwsong@xidian.edu.cn, Tang, Xiaoyan1, Zhang, Zeyulin1, Yuan, Hao1, Han, Chao1, Zhang, Chunfu1, Zhang, Yimen1, Zhang, Yuming1
Zdroj: IEEE Transactions on Electron Devices. Nov2021, Vol. 68 Issue 11, p5662-5665. 4p.
Databáze: Business Source Ultimate