AlGaAs/GaAs asymmetric‐waveguide, short cavity laser diode design with a bulk active layer near the p‐cladding for high pulsed power emission.
Autor: | Avrutin, Eugene A.1 eugene.avrutin@york.ac.uk, Ryvkin, Boris S.2,3, Kostamovaara, Juha T.2 |
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Zdroj: | IET Optoelectronics (Wiley-Blackwell). Aug2021, Vol. 15 Issue 4, p194-199. 6p. |
Databáze: | Business Source Ultimate |
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