AlGaAs/GaAs asymmetric‐waveguide, short cavity laser diode design with a bulk active layer near the p‐cladding for high pulsed power emission.

Autor: Avrutin, Eugene A.1 eugene.avrutin@york.ac.uk, Ryvkin, Boris S.2,3, Kostamovaara, Juha T.2
Zdroj: IET Optoelectronics (Wiley-Blackwell). Aug2021, Vol. 15 Issue 4, p194-199. 6p.
Databáze: Business Source Ultimate
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