A Modeling Study of Dislocation Sidewall Gettering in II-VI and III-V Semiconductor Heterostructures.
| Autor: | Kujofsa, Tedi1 (AUTHOR) tedi.kujofsa@gmail.com, Ayers, J. E.1 (AUTHOR) john.ayers@uconn.edu |
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| Zdroj: | International Journal of High Speed Electronics & Systems. Mar-Dec2020, Vol. 29 Issue 1-4, pN.PAG-N.PAG. 6p. |
| Databáze: | Business Source Ultimate |
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