Investigation on Single Pulse Avalanche Failure of 1200-V SiC MOSFETs via Optimized Thermoelectric Simulation.
| Autor: | Bai, Zhiqiang1, Tang, Xiaoyan1 xytang@mail.xidian.edu.cn, Xie, Siliang1, He, Yanjing1, Yuan, Hao1, Song, Qingwen1, Zhang, Yuming1 |
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| Zdroj: | IEEE Transactions on Electron Devices. Mar2021, Vol. 68 Issue 3, p1168-1175. 8p. |
| Databáze: | Business Source Ultimate |
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