A New Oxide-Trap Based on Charge-Pumping (OTCP) Extraction Method for Irradiated MOSFET Devices: Part I (High Frequencies).
| Autor: | Djezzar, Boualem1 boualem.djezzar@cdta.dz, Oussalah, Slirnane1 bobdjezzar@hotmail.com, Smatti, Abderrazak1 |
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| Zdroj: | IEEE Transactions on Nuclear Science. Aug2004 Part 1 of 2, Vol. 51 Issue 4, p1724-1731. 8p. |
| Databáze: | Business Source Ultimate |
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