Influence of Process Chamber Ambient on SiOC (k = 2.9) ILD Cu Damascene Ashing.
| Autor: | Tokashiki, Ken1 ken.tokashiki@necel.com, Maruyama, Takuya1, Nishizawa, Atsushi1 |
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| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. Aug2004, Vol. 17 Issue 3, p305-310. 6p. |
| Databáze: | Business Source Ultimate |
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