Enhancement-Mode High Electron Mobility Transistors (E-HEMT's) Lattice-Matched to InP.
| Autor: | Mahajan, Aaditya, Arafa, Mohamed |
|---|---|
| Zdroj: | IEEE Transactions on Electron Devices. Dec98, Vol. 45 Issue 12, p2422. 8p. |
| Databáze: | Business Source Ultimate |
| Externí odkaz: |
|