A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices.

Autor: Jorgensen, Asger Bjorn, Beczkowski, Szymon, Uhrenfeldt, Christian, Petersen, Niels Hogholt, Jorgensen, Soren, Munk-Nielsen, Stig
Zdroj: IEEE Transactions on Power Electronics. Mar2019, Vol. 34 Issue 3, p2494-2504. 11p.
Databáze: Business Source Ultimate