Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing With Device Applications.

Autor: Lu, Fang-Liang, Tsai, Chung-En, Wong, I-Hsieh, Lu, Chun-Ti, Liu, C. W.
Zdroj: IEEE Transactions on Electron Devices. Jul2018, Vol. 65 Issue 7, p2925-2931. 7p.
Databáze: Business Source Ultimate