Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing With Device Applications.
Autor: | Lu, Fang-Liang, Tsai, Chung-En, Wong, I-Hsieh, Lu, Chun-Ti, Liu, C. W. |
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Zdroj: | IEEE Transactions on Electron Devices. Jul2018, Vol. 65 Issue 7, p2925-2931. 7p. |
Databáze: | Business Source Ultimate |
Externí odkaz: |