The Effects of N2O Plasma Treatment on the Device Performance of Solution-Processed a-InMgZnO Thin-Film Transistors.
Autor: | Cheng, Jin1, Yu, Zhinong1, Li, Xuyang1, Guo, Jian2, Yan, Wei1, Xue, Jianshe2, Xue, Wei1 |
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Zdroj: | IEEE Transactions on Electron Devices. Jan2018, Vol. 65 Issue 1, p136-141. 6p. |
Databáze: | Business Source Ultimate |
Externí odkaz: |