The Effects of N2O Plasma Treatment on the Device Performance of Solution-Processed a-InMgZnO Thin-Film Transistors.

Autor: Cheng, Jin1, Yu, Zhinong1, Li, Xuyang1, Guo, Jian2, Yan, Wei1, Xue, Jianshe2, Xue, Wei1
Zdroj: IEEE Transactions on Electron Devices. Jan2018, Vol. 65 Issue 1, p136-141. 6p.
Databáze: Business Source Ultimate