Modeling of the I - V characteristics for LDD-nMOSFETs in relation with defects induced by hot-carrier injection.

Autor:	Marrakh, R., Bouhdada, A.
Zdroj:	Active & Passive Electronic Components. Dec2003, Vol. 26 Issue 4, p197. 8p.
Databáze:	Business Source Ultimate
Externí odkaz:	Zobrazit plný text záznamu