A New Physical Method Based on $CV$ – $GV$ Simulations for the Characterization of the Interfacial and Bulk Defect Density in High- $k$ /III-V MOSFETs.
| Autor: | Sereni, Gabriele1, Vandelli, Luca1, Veksler, Dmitry2, Larcher, Luca1 |
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| Zdroj: | IEEE Transactions on Electron Devices. Mar2015, Vol. 62 Issue 3, p705-712. 8p. |
| Databáze: | Business Source Ultimate |
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