Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profiling
| Autor: | Radtke, C.1, Baumvol, I.J.R.1, Stedile, F.C.2 fernanda@iq.ufrgs.br, Vickridge, I.C.3, Trimaille, I.3, Ganem, J.-J.3, Rigo, S.3 |
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| Zdroj: | Applied Surface Science. May2003, Vol. 212-213, p570. 5p. |
| Databáze: | Academic Search Ultimate |
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