Specific features of the nonradiative relaxation of Er ions in epitaxial Si structures.

Autor: Kudryavtsev, K. konstantin@ipmras.ru, Kryzhkov, D., Antonov, A., Shengurov, D.1, Shmagin, V., Krasilnik, Z.
Zdroj: Semiconductors. Dec2014, Vol. 48 Issue 12, p1586-1591. 6p.
Databáze: Academic Search Ultimate