Specific features of the nonradiative relaxation of Er ions in epitaxial Si structures.
Autor: | Kudryavtsev, K. konstantin@ipmras.ru, Kryzhkov, D., Antonov, A., Shengurov, D.1, Shmagin, V., Krasilnik, Z. |
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Zdroj: | Semiconductors. Dec2014, Vol. 48 Issue 12, p1586-1591. 6p. |
Databáze: | Academic Search Ultimate |
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