Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers.
| Autor: | Vinichenko, A.1 vanaxel@gmail.com, Gladkov, V.1, Kargin, N.1, Strikhanov, M.1, Vasil'evskii, I.1 |
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| Zdroj: | Semiconductors. Dec2014, Vol. 48 Issue 12, p1619-1625. 7p. |
| Databáze: | Academic Search Ultimate |
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