Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C.

Autor:	Hideki Matsumura1, Taro Hayakawa1, Tatsunori Ohta1, Yuki Nakashima1, Motoharu Miyamoto1, Trinh Cham Thi1, Koichi Koyama1, Keisuke Ohdaira1
Zdroj:	Journal of Applied Physics. 2014, Vol. 116 Issue 11, p114502-1-114502-10. 10p. 1 Diagram, 1 Chart, 18 Graphs.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu