Investigation of the influence of isovalent impurity of silicon and γ-irradiation (60Co) on electrophysical parameters of n-Ge (Sb).
| Autor: | Gaidar, G. P.1 gaydar@kinr.kiev.ua |
|---|---|
| Zdroj: | Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014, Vol. 17 Issue 1, p25-28. 4p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
|