Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping.
| Autor: | Lukashin, V.1, Pashkovskii, A.1, Zhuravlev, K.2 zhur@thermo.isp.nsc.ru, Toropov, A.2, Lapin, V.1, Golant, E.1, Kapralova, A.1 |
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| Zdroj: | Semiconductors. May2014, Vol. 48 Issue 5, p666-674. 9p. |
| Databáze: | Academic Search Ultimate |
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