Investigation of the restoration effect of the radiative parameters of high-power laser diodes based on GaAsP/AlGaAs/GaAs strained heterostructures at a wavelength of 808 nm.
| Autor: | Bezotosnyi, V.1 victorbe@sci.lebedev.ru, Oleshenko, V.1, Cheshev, E.1 |
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| Zdroj: | Semiconductors. Jan2014, Vol. 48 Issue 1, p104-108. 5p. |
| Databáze: | Academic Search Ultimate |
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