Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0-1.2 μm.
| Autor: | Morozov, S.1 more@ipm.sci.-nnov.ru, Kryzhkov, D.1, Aleshkin, V.1, Zvonkov, B.2, Vikhrova, O.2 |
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| Zdroj: | Semiconductors. Nov2013, Vol. 47 Issue 11, p1504-1507. 4p. |
| Databáze: | Academic Search Ultimate |
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