Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism.

Autor: Ye Zhou1, Su-Ting Han1, Sonar, Prashant2, Roy, V. A. L.1 val.roy@cityu.edu.hk
Zdroj: Scientific Reports. 8/2/2013, p1-7. 7p.
Databáze: Academic Search Ultimate