Impact of the forming conditions and electrode metals on read disturb in HfO2-based RRAM.
| Autor: | Lorenzi, P.1 lorenzi@die.uniroma1.it, Rao, R.1, Prifti, T.1, Irrera, F.1 |
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| Zdroj: | Microelectronics Reliability. Sep2013, Vol. 53 Issue 9-11, p1203-1207. 5p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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