An Analytical Model of the Diffusion Redistribution of Ion-Implanted Impurity in the Gate Region of a MOS Transistor.
| Autor: | Bormontov, E. N., Bryazgunov, Yu. I., Lezhenin, V. P. |
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| Zdroj: | Technical Physics Letters. Jan2003, Vol. 29 Issue 1, p47. 4p. |
| Databáze: | Academic Search Ultimate |
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