Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well.

Autor: Zvonkov, B. N.1, Nekorkin, S. M.1, Vikhrova, O. V.1, Dikareva, N. V.1 dikareva@nifti.unn.ru
Zdroj: Semiconductors. Sep2013, Vol. 47 Issue 9, p1219-1223. 5p.
Databáze: Academic Search Ultimate