High-Pressure Treatment up to 25 GPa of Czochralski Grown Si Samples Containing Different Admixtures and Defects.

Autor:	SHCHENNIKOV, V. V.1, SHCHENNIKOV, Vs. V.2, KOROBEYNIKOV, I. V.1 highpressgroup@mail.ru, MOROZOVA, N. V.1
Zdroj:	Acta Physica Polonica: A. Aug2013, Vol. 124 Issue 2, p244-249. 6p. 1 Chart, 5 Graphs.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu