Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy.
Autor: | Mikhailova, M.1, Andreev, I.1 igor@iropt9.ioffe.ru, Ivanov, E.1, Konovalov, G.1, Grebentshikova, E.1, Yakovlev, Yu.1, Hulicius, E.2, Hospodkova, A.2, Pangrac, Y.2 |
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Zdroj: | Semiconductors. Aug2013, Vol. 47 Issue 8, p1041-1045. 5p. |
Databáze: | Academic Search Ultimate |
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