Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy.

Autor:	Mikhailova, M.1, Andreev, I.1 igor@iropt9.ioffe.ru, Ivanov, E.1, Konovalov, G.1, Grebentshikova, E.1, Yakovlev, Yu.1, Hulicius, E.2, Hospodkova, A.2, Pangrac, Y.2
Zdroj:	Semiconductors. Aug2013, Vol. 47 Issue 8, p1041-1045. 5p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu