Laser-induced incandescence of silicon surface under 1064-nm excitation.
Autor: | Kopyshinsky, A. V.1, Zelensky, S. E.1, Gomon, E. A.1, Rozouvan, S. G.1, Kolesnik, A. S.1 |
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Zdroj: | Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012, Vol. 15 Issue 4, p376-381. 6p. |
Databáze: | Academic Search Ultimate |
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