Laser-induced incandescence of silicon surface under 1064-nm excitation.

Autor: Kopyshinsky, A. V.1, Zelensky, S. E.1, Gomon, E. A.1, Rozouvan, S. G.1, Kolesnik, A. S.1
Zdroj: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012, Vol. 15 Issue 4, p376-381. 6p.
Databáze: Academic Search Ultimate