Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxy.
| Autor: | Tetzlaff, D.1 tetzlaff@mbe.uni-hannover.de, Wietler, T.F.1, Bugiel, E.1, Osten, H.J.1 |
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| Zdroj: | Journal of Crystal Growth. Sep2013, Vol. 378, p254-258. 5p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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